Intel Corporation and Micron Technology, Inc. have been honored for their work in the computing market, receiving the Most Innovative Flash Memory Technology award Aug. 10 at the 2011 Flash Memory Summit for the companies’ 20 nanometer NAND Flash memory process technology.
The 20nm 8 gigabyte NAND device provides approximately 50 percent more gigabyte capacity than current technology and helps further the companies’ dual goal to enable instant, affordable access to information. It also allows for a 30 to 40 percent reduction in board space compared to existing 25nm 8GB NAND devices, resulting in greater system level efficiency.
“NAND silicon process and die level innovation is foundational for the flash memory industry to provide compelling end solutions like solid-state drives,” said Tom Rampone, Intel vice president and general manager of the Intel Non-Volatile Memory Solutions Group. “We are pleased that the Flash Memory Summit continues to recognize the innovation and success that Intel and Micron are achieving together.”
Flash Memory Summit is the only conference dedicated entirely to flash memory and its applications, intended to educate a diverse group of professionals on subjects including consumer products, caching methods, testing and security.