The company will produce next-generation gallium nitride technology and devices that will be attached to diamond substrates for DARPA over an 18-month period.
The technology will be used to power GaN devices, the company said.
TEGaN reduces thermal resistance of transistor and monolithic microwave integrated circuits, which the company said increased the power output of devices.
The company will continue to develop and test TEGaN“™s capabilities for use on radar, electronic warfare and communication systems.
The advanced technology group for Raytheon“™s integrated defense systems unit will carry out work at the company’s integrated air defense center in Andover, Mass.
Joe Biondi, a vice president for advanced technology, said Raytheon is pushing the envelope of this technology in order to provide warfighters communications, sensing and electronic warfare capabilities.
Raytheon“™s technical services company won a prime spot on a potential $33 million blanket purchase agreement Tuesday to provide mission readiness support services to U.S. Pacific Command.