Northrop Grumman has unveiled two monolithic microwave integrated circuit amplifiers the company designed for E-band and W-band communication, sensing, imaging and digital radio platforms.
The firm’s MMIC transistors are made from indium phosphide, has ultra low noise characteristics and intended for use by civil, military and commercial organizations, Northrop said Wednesday.
“The LNAs are the initial release of products designed with the company’s indium phosphide process, a powerful semiconductor technology that has successfully been used in Northrop Grumman’s advanced military communication systems,” said Frank Kropschot, Northrop general manager of microelectronics products and services.
“For the first time, Northrop is offering products for similarly demanding commercial applications,” Kropschot added.
The company produces the broadband LNAs at a Defense Department-approved microelectronics factory in Manhattan Beach.
Northrop’s semiconductor facility works to apply gallium nitride, indium phosphide and gallium arsenide technology in manufacturing processes.