Northrop Grumman has developed and tested a nonvolatile memory chip product designed to operate at high temperatures for a long period of time.
The company’s new complementary metal oxide semiconductor technology is built to offer electrically erasable programmable read-only memory capacity of up to 256 kilobytes, Northrop said Tuesday.
Recent tests indicated the device’s memory retention could last more than five years with operating temperature as high as 437 degrees Fahrenheit.
Northrop designed the EEPROM in partnership with Sandia National Laboratories in New Mexico and produced the chip at the firm’s advanced technology laboratories.
The company aims to meet final qualification requirements for the nonvolatile semiconductor memory product by July 2015 and seeks to offer the technology in multiple sectors, including the oil exploration industry.