BAE to Work on Gallium Nitride Semiconductors Under AFRL Partnership

BAE Systems will work to further advance the U.S. Air Force‘s gallium nitride semiconductor technology under a joint effort with the Air Force Research Laboratory.

The company said Monday it will transfer the semiconductors to the Nashua, N.H.-based Advanced Microwave Products Center for scaling into 6-inch wafers in a move to reduce costs and increase accessibility of the technology.

The GaN technology aims to deliver broadband, high efficiency and high transmit power capacities for communications and electronic warfare systems, with small footprint produced, for electronic warfare, communications systems and radar applications.

BAE will craft a process to produce 140-nanometer GaN monolithic microwave integrated circuits by 2020.

The Defense Department‘s suppliers will then gain access to these circuits via an open foundry.

Primary work will take place at BAE Systems’ Microelectronics Center, also located in Nashua.

The company’s AMP and microelectronics centers facilitate research, development and production of semiconductor materials.

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