A Teledyne Technologies business has unveiled two new ruggedized gallium nitride, high electron mobility transistors designed for high-reliability space, avionics and military applications.
“We are pleased to continue the build-out of our 650 V family of high power GaN HEMTs for applications requiring the highest reliability such as space,” said Mont Taylor, vice president of business development for Teledyne e2v HiRel.
Taylor added the devices’ smaller sized packaging could benefit clients as they design for high power density projects.
The two new GaN HEMTs allow for high voltage breakdown and high switching frequency and feature reverse current capability, ultra-low FOM Island Technology die, low inductance GaNPX packaging and a bottom-side cooled configuration.
Teledyne announced Monday that it agreed to acquire sensor technology provider FLIR Systems through a cash-and-stock transaction worth approximately $8B.