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Teledyne Business Launches Two GaN High Electron Mobility Transistors for Military, Space Applications

Teledyne e2v HiRel
Teledyne e2v HiRel

A Teledyne Technologies business has unveiled two new ruggedized gallium nitride, high electron mobility transistors designed for high-reliability space, avionics and military applications.

The 30-amp TDG650E30B and 15-amp TDG650E15B GaN HEMTs are the latest additions to Teledyne e2v HiRel“™s family of 650-volt products based on GaN Systems“™ technology, the company said Wednesday.

“We are pleased to continue the build-out of our 650 V family of high power GaN HEMTs for applications requiring the highest reliability such as space,“ said Mont Taylor, vice president of business development for Teledyne e2v HiRel.

Taylor added the devices“™ smaller sized packaging could benefit clients as they design for high power density projects.

The two new GaN HEMTs allow for high voltage breakdown and high switching frequency and feature reverse current capability, ultra-low FOM Island Technology die, low inductance GaNPX packaging and a bottom-side cooled configuration.

Teledyne announced Monday that it agreed to acquire sensor technology provider FLIR Systems through a cash-and-stock transaction worth approximately $8B.

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