Tag Archives: gallium nitride

Teledyne Business Launches Two GaN High Electron Mobility Transistors for Military, Space Applications

Teledyne e2v HiRel

A Teledyne Technologies business has unveiled two new ruggedized gallium nitride, high electron mobility transistors designed for high-reliability space, avionics and military applications. The 30-amp TDG650E30B and 15-amp TDG650E15B GaN HEMTs are the latest additions to Teledyne e2v HiRel’s family of 650-volt products based on GaN Systems’ technology.

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Northrop Advances GaN Tech Development for Military Systems in Multidomain Battlespace

Northrop Grumman develops gallium nitride and other semiconductor materials for integration with radars, sensors and other electronic warfare systems to support warfighters as they operate in the multidomain battlespace. The company said Wednesday it produces GaN and other semiconductors through its advanced technology laboratory, which runs as a Pentagon trusted foundry and has delivered over 8M components used to support missions across maritime, space and other domains.

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Lockheed to Insert Gallium Nitride Into Army Radar Tech

Lockheed Martin has received a contract modification to incorporate gallium nitride into U.S. Army radars used to protect soldiers from indirect fire. The company said Monday updating the AN/TPQ-53 radar technology with GaN can help increase the system’s performance to acquire counterfire targets. AN/TPQ-53 is designed to help military users detect, classify, track and identify the location …

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Northrop’s Monolithic Microwave Integrated Circuits Comply With FCC 5G Requirements

A Northrop Grumman business has announced several monolithic microwave integrated circuit offerings that comply with the Federal Communications Commission’s requirements for 5G frequency bands. Northrop’s microelectronics products and services business made the announcement at the 2017 International Microwave Symposium, the company said Wednesday. Some of those MMIC products include APN243, APN248 …

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Raytheon Awarded Additional Gallium Nitride Production Process Development Funds

Raytheon has secured a $14.9 million contract from the U.S. Air Force Research Laboratory and Office of the Secretary of Defense to further develop the production process of gallium nitride-based semiconductors. The company said Wednesday it will work to update the performance, supply and the dependability of wideband, monolithic, microwave-integrated circuits and circulator …

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MDA Taps Raytheon to Develop Gallium Nitride Component Transition Process for Radars

Raytheon has received a contract modification from the Missile Defense Agency to develop a transition-to-production process that will incorporate Gallium Nitride components onto existing and future AN/TPY-2 radars. The company said Friday the initial effort will also support efforts to modernize ballistic missile defense radars through the transition from Gallium Arsenide to GaN technology …

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Army Research Lab, Raytheon to Collaborate on Radar Tech Development

Raytheon will collaborate with the U.S. Army Research Laboratory to develop modular building blocks for the service branch’s Next Generation Radar program under a two-year, $1.1 million cooperative research agreement. The partnership aims to explore approaches to design and fabricate modular components for integration into the NGR’s open architecture and address flexibility, agility and efficiency requirements across radar bands, Raytheon …

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Raytheon to Exhibit New Patriot System Radar Tech at Army Trade Expo

Raytheon will display its new gallium nitride-based Active Electronically Scanned Array main antenna designed to work with the Patriot air and missile defense system at the Association of the U.S. Army‘s Global Force Symposium and Exposition Tuesday through Thursday in Huntsville, Alabama. Raytheon said Monday the AESA main array is designed to provide 360-degree coverage enabled by smaller …

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